采用磁过滤真空直流阴极弧蒸发工艺在石英基底上沉积N掺杂Ti薄膜，随后将其在马弗炉中以不同的退火温度（100～700℃）热处理制备N掺杂TiO2薄膜，采用X线衍射仪（XRD）、拉曼光谱仪（Raman）、X线光电子能谱（ XPS）和扫描电子显微镜（ SEM）分析表征。结果表明：初始态N掺杂Ti薄膜为包含少量TiN相的Ti薄膜，在300℃退火处理时，N掺杂Ti薄膜直接氧化生成N掺杂金红石相TiO2薄膜。初始态的N掺杂Ti薄膜表面平整、颗粒细密，与基底附着牢固，经700℃退火处理后，TiO2颗粒得到了良好的结晶生长，薄膜厚度增加了60％。当热处理温度为600℃时，N掺杂TiO2复合膜中替代型N开始转变为填隙型N，由于填隙型N具有更高的能级，这种N位置的转变进一步窄化了N掺杂TiO2的能带宽度，提高了对可见光的利用率。
A simple method by annealing of N?doping Ti film to prepare N?doping TiO2 film was employed,where the N?doping Ti film was deposited by filtered cathode arc evaporation with quartz as substrate. N?doping TiO2 film was characterized by X?ray diffraction ( XRD ) , Raman spectrometer (Raman),X?ray photoelectron spectroscopy(XPS) and scanning electron microscope (SEM).Results showed that N?doping Ti film was consisted of Ti containing a small amount of TiN,and was converted to N?doping rutile phase TiO2 film directly as the annealing temperature was raised to 300 ℃. The initial state film was attached to substrate firmly. After annealing at 700 ℃,titanium oxide particles were well crystallized growth and the thickness of the film increased by 60%. When the heat treatment temperature improved to 600 ℃,interstitial N was emerged in TiO2 lattice,which was transferred from substitutional site.For the interstitial N energy state was slightly higher than that of substitutional N and the bandgap of N?doping TiO2 film could be further narrowed leading to an increased availability on visible light.